IndiumV3, Main, Repository, bibRecord, 008F71

Co-doped In2O3 thin films : Room temperature ferromagnets

Identifieur interne : 008F71 ( Main/Repository ); précédent : 008F70; suivant : 008F72

Co-doped In2O3 thin films : Room temperature ferromagnets

Auteurs : RBID : Pascal:06-0201473

Descripteurs français

Pascal (Inist)
- Codopage, Epaisseur, Moment magnétique, Ferromagnétisme, Dopage, Indium oxyde, Couche mince, Matériau ferromagnétique, Aluminium oxyde, Magnésium oxyde, Matériau magnétique, Semiconducteur, In2O3, Al2O3, MgO, 7550, 75.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Aluminium oxides, Codoping, Doping, Ferromagnetic materials, Ferromagnetism, Indium oxides, Magnesium oxides, Magnetic materials, Magnetic moments, Semiconductor materials, Thickness, Thin films.

Abstract

Laser-ablated Co-doped In₂O₃ thin films were fabricated under various growth conditions on R-cut Al₂O₃ and MgO substrates. All Co:In₂O₃ films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ_B/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In₂O₃ thin films has confirmed that doping few percent of magnetic elements such as Co into In₂O₃ could result in a promising magnetic material.

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Pascal:06-0201473

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Co-doped In<sub>2</sub>
O<sub>3</sub>
 thin films : Room temperature ferromagnets</title>
<author><name>NGUYEN HOA HONG</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Parc de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
<settlement type="city">Tours</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sakai, Joe" uniqKey="Sakai J">Joe Sakai</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1</s1>
<s2>Nomi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Nomi, Ishikawa 923-1292</wicri:noRegion>
</affiliation>
</author>
<author><name>NGO THU HUONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1</s1>
<s2>Nomi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Nomi, Ishikawa 923-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Brize, Virginie" uniqKey="Brize V">Virginie Brize</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Parc de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
<settlement type="city">Tours</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0201473</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0201473 INIST</idno>
<idno type="RBID">Pascal:06-0201473</idno>
<idno type="wicri:Area/Main/Corpus">009187</idno>
<idno type="wicri:Area/Main/Repository">008F71</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0304-8853</idno>
<title level="j" type="abbreviated">J. magn. magn. mater.</title>
<title level="j" type="main">Journal of magnetism and magnetic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium oxides</term>
<term>Codoping</term>
<term>Doping</term>
<term>Ferromagnetic materials</term>
<term>Ferromagnetism</term>
<term>Indium oxides</term>
<term>Magnesium oxides</term>
<term>Magnetic materials</term>
<term>Magnetic moments</term>
<term>Semiconductor materials</term>
<term>Thickness</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Codopage</term>
<term>Epaisseur</term>
<term>Moment magnétique</term>
<term>Ferromagnétisme</term>
<term>Dopage</term>
<term>Indium oxyde</term>
<term>Couche mince</term>
<term>Matériau ferromagnétique</term>
<term>Aluminium oxyde</term>
<term>Magnésium oxyde</term>
<term>Matériau magnétique</term>
<term>Semiconducteur</term>
<term>In2O3</term>
<term>Al2O3</term>
<term>MgO</term>
<term>7550</term>
<term>75</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Laser-ablated Co-doped In<sub>2</sub>
O<sub>3</sub>
 thin films were fabricated under various growth conditions on R-cut Al<sub>2</sub>
O<sub>3</sub>
 and MgO substrates. All Co:In<sub>2</sub>
O<sub>3</sub>
 films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ<sub>B</sub>
/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In<sub>2</sub>
O<sub>3</sub>
 thin films has confirmed that doping few percent of magnetic elements such as Co into In<sub>2</sub>
O<sub>3</sub>
 could result in a promising magnetic material.</div>
</front>
</TEI>
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<fA06><s2>1</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Co-doped In<sub>2</sub>
O<sub>3</sub>
 thin films : Room temperature ferromagnets</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>NGUYEN HOA HONG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SAKAI (Joe)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>NGO THU HUONG</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BRIZE (Virginie)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Parc de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1</s1>
<s2>Nomi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>228-231</s1>
</fA20>
<fA21><s1>2006</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
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<s5>354000153328450350</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>17 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>06-0201473</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of magnetism and magnetic materials</s0>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Laser-ablated Co-doped In<sub>2</sub>
O<sub>3</sub>
 thin films were fabricated under various growth conditions on R-cut Al<sub>2</sub>
O<sub>3</sub>
 and MgO substrates. All Co:In<sub>2</sub>
O<sub>3</sub>
 films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ<sub>B</sub>
/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In<sub>2</sub>
O<sub>3</sub>
 thin films has confirmed that doping few percent of magnetic elements such as Co into In<sub>2</sub>
O<sub>3</sub>
 could result in a promising magnetic material.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70E50</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Codopage</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Codoping</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Codrogado</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Epaisseur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Thickness</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Moment magnétique</s0>
<s5>04</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Magnetic moments</s0>
<s5>04</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Ferromagnétisme</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Ferromagnetism</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Dopage</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Doping</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Doping</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium oxides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>16</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Thin films</s0>
<s5>16</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Matériau ferromagnétique</s0>
<s5>17</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Ferromagnetic materials</s0>
<s5>17</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Aluminium oxyde</s0>
<s2>NK</s2>
<s5>18</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Aluminium oxides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Magnésium oxyde</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Magnesium oxides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Matériau magnétique</s0>
<s5>20</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Magnetic materials</s0>
<s5>20</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>21</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>21</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Al2O3</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>MgO</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>7550</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>75</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fN21><s1>128</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
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</record>

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Co-doped In2O3 thin films : Room temperature ferromagnets

Co-doped In2O3 thin films : Room temperature ferromagnets

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri